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IRFP2907ZPBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP2907ZPBF
상세설명  Advanced Process Technology
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP2907ZPBF 데이터시트(HTML) 1 Page - International Rectifier

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IRFP2907ZPbF
HEXFET® Power MOSFET
VDSS = 75V
RDS(on) = 4.5mى
ID = 90A
02/10/11
www.irf.com
1
HEXFET® is a registered trademark of International Rectifier.
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating.Thesefeaturescombine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
S
D
G
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
TO-247AC
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
™
A
EAR
Repetitive Avalanche Energy
h
mJ
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.49
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
RθJA
Junction-to-Ambient
j
–––
40
Max.
170
120
680
90
10 lbf•in (1.1N•m)
310
2.0
± 20
520
690
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
l
Lead-Free
PD - 95480B


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