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IRFP3006PBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP3006PBF
상세설명  High Efficiency Synchronous Rectification in SMPS
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP3006PBF 데이터시트(HTML) 1 Page - International Rectifier

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IRFP3006PbF
1
www.irf.com
© 2013 International Rectifier
September 06, 2013
Applications
 High Efficiency Synchronous Rectification in SMPS
 Uninterruptible Power Supply
 High Speed Power Switching
 Hard Switched and High Frequency Circuits
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free
Gate
Drain
Source
G
D
S
VDSS
60V
RDS(on) typ.
2.1m
max.
2.5m
ID (Silicon Limited)
270A
ID (Package Limited)
195A
Base Part Number
Package Type
Standard Pack
Orderable Part Number
  
Form
Quantity
 
IRFP3006PbF
TO-247
Tube
25
IRFP3006PbF
Absolute Maximum Ratings
  
 
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
270
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V(Silicon Limited)
190
IDM
Pulsed Drain Current 
1080
PD @TC = 25°C
Maximum Power Dissipation
375
W
Linear Derating Factor
2.5
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
Operating Junction and
-55 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Mounting torque, 6-32 or M3 screw
10lbfin (1.1Nm)
Avalanche Characteristics
  
 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
320
mJ
IAR
Avalanche Current 
See Fig. 14, 15, 22a, 22b
A
EAR
Repetitive Avalanche Energy 
mJ
Thermal Resistance
  
 
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
0.4
RCS
Case-to-Sink, Flat Greased Surface
0.24
–––
°C/W
RJA
Junction-to-Ambient
–––
40
 
 
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
195
 
dv/dt
Peak Diode Recovery 
10
V/ns
 
TO-247AC
G
D
S
D
S
G
 


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