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IRFP1405PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP1405PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 9 page HEXFET® Power MOSFET VDSS = 55V RDS(on) = 5.3mΩ ID = 95A 08/18/10 www.irf.com 1 This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistancepersiliconarea. Additionalfeatures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combinetomakethisdesignanextremelyefficient and reliable device for use in a wide variety of applications. S D G Description l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Features HEXFET® is a registered trademark of International Rectifier. * Rθ is measured at TJ approximately 90°C IRFP1405PbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range°C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case * ––– 0.49 Rθcs Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient * ––– 40 1060 530 See Fig.12a, 12b, 15, 16 310 2.0 ± 20 Max. 160 110 640 95 -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) PD - 95509A TO-247AC S D G |
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