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IRFP1405PBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP1405PBF
상세설명  Advanced Process Technology
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP1405PBF 데이터시트(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 5.3mΩ
ID = 95A
08/18/10
www.irf.com
1
This HEXFET®Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combinetomakethisdesignanextremelyefficient
and reliable device for use in a wide variety of
applications.
S
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Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Features
HEXFET® is a registered trademark of International Rectifier.
* Rθ is measured at TJ approximately 90°C
IRFP1405PbF
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case *
–––
0.49
Rθcs
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient *
–––
40
1060
530
See Fig.12a, 12b, 15, 16
310
2.0
± 20
Max.
160
110
640
95
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
PD - 95509A
TO-247AC
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