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IRFP2907PBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP2907PBF
상세설명  Advanced Process Technology
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
209
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
148
†
A
IDM
Pulsed Drain Current

840
PD @TC = 25°C
Power Dissipation
470
W
Linear Derating Factor
3.1
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
1970
mJ
IAR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
‡
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
IRFP2907PbF
HEXFET® Power MOSFET
This Stripe Planar design of HEXFET®Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
S
D
G
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.32
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
VDSS = 75V
RDS(on) = 4.5mΩ
ID = 209A
†
Description
08/08/11
www.irf.com
1
TO-247AC
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Benefits
Typical Applications
l
Telecom applications requiring soft start
PD -95050C


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