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IRFP4127PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP4127PBF
상세설명  High Efficiency Synchronous Rectification in SMPS
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제조업체  IRF [International Rectifier]
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IRFP4127PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP4127PbF
2
www.irf.com
© 2015 International Rectifier
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March 09, 2015
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.23
–––
V/°C Reference to 25°C, ID = 5mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
17
21
m
 VGS = 10V, ID = 44A 
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 200 V, VGS = 0V
–––
–––
250
VDS =200V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Gate Resistance
–––
3.0
–––

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs
Forward Transconductance
45
–––
–––
S
VDS = 50V, ID =44A
Qg
Total Gate Charge
–––
100
150
nC  
ID = 44A
Qgs
Gate-to-Source Charge
–––
30
–––
VDS = 100V
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
69
–––
ID = 44A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
17
–––
ns
VDD = 100V
tr
Rise Time
–––
18
–––
ID = 44A
td(off)
Turn-Off Delay Time
–––
56
–––
RG= 2.7
tf
Fall Time
–––
22
–––
VGS = 10V
Ciss
Input Capacitance
–––
5380 –––
pF  
VGS = 0V
Coss
Output Capacitance
–––
410
–––
VDS = 50V
Crss
Reverse Transfer Capacitance
–––
86
–––
ƒ = 1.0MHz
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
360
–––
VGS = 0V, VDS = 0V to 160V
See Fig.11
Coss eff.(TR)
Output Capacitance (Time Related)
–––
590
–––
VGS = 0V, VDS = 0V to 160V
Diode Characteristics  
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
75
A
MOSFET symbol
(Body Diode) 
showing the
ISM
Pulsed Source Current
–––
–––
300
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C,IS = 44A,VGS = 0V 
trr
Reverse Recovery Time
–––
136
–––
ns
TJ = 25°C
VDD = 100V
–––
139
–––
TJ = 125°C
IF = 44A,
Qrr
Reverse Recovery Charge
–––
458
–––
nC
TJ = 25°C
di/dt = 100A/µs 
–––
688
–––
TJ = 125°C
 
IRRM
Reverse Recovery Current
–––
8.3
–––
A
TJ = 25°C
Qgd
Gate-to-Drain Charge
–––
31
–––
VGS = 10V
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Recommended max EAS limit, starting TJ = 25°C, L = 0.25mH, RG = 25, IAS = 44A, VGS =10V.
ISD 4A, di/dt A/µs, VDD V(BR)DSS, TJ  175°C.
Pulse width
400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994
R
is measured at TJ approximately 90°C


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