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IRFP4127PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRFP4127PBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 9 page IRFP4127PbF 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 09, 2015 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C Reference to 25°C, ID = 5mA RDS(on) Static Drain-to-Source On-Resistance ––– 17 21 m VGS = 10V, ID = 44A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 200 V, VGS = 0V ––– ––– 250 VDS =200V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 3.0 ––– Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) gfs Forward Transconductance 45 ––– ––– S VDS = 50V, ID =44A Qg Total Gate Charge ––– 100 150 nC ID = 44A Qgs Gate-to-Source Charge ––– 30 ––– VDS = 100V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 69 ––– ID = 44A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time ––– 17 ––– ns VDD = 100V tr Rise Time ––– 18 ––– ID = 44A td(off) Turn-Off Delay Time ––– 56 ––– RG= 2.7 tf Fall Time ––– 22 ––– VGS = 10V Ciss Input Capacitance ––– 5380 ––– pF VGS = 0V Coss Output Capacitance ––– 410 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 360 ––– VGS = 0V, VDS = 0V to 160V See Fig.11 Coss eff.(TR) Output Capacitance (Time Related) ––– 590 ––– VGS = 0V, VDS = 0V to 160V Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 75 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 300 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 44A,VGS = 0V trr Reverse Recovery Time ––– 136 ––– ns TJ = 25°C VDD = 100V ––– 139 ––– TJ = 125°C IF = 44A, Qrr Reverse Recovery Charge ––– 458 ––– nC TJ = 25°C di/dt = 100A/µs ––– 688 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 8.3 ––– A TJ = 25°C Qgd Gate-to-Drain Charge ––– 31 ––– VGS = 10V D S G Notes: Repetitive rating; pulse width limited by max. junction temperature. Recommended max EAS limit, starting TJ = 25°C, L = 0.25mH, RG = 25, IAS = 44A, VGS =10V. ISD 4A, di/dt A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90°C |
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