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IRFP4127PBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP4127PBF
상세설명  High Efficiency Synchronous Rectification in SMPS
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

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IRFP4127PbF
HEXFET® Power MOSFET
D
S
G
TO-247AC
G
D
S
Gate
Drain
Source
Application
 High Efficiency Synchronous Rectification in SMPS
 Uninterruptible Power Supply

High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant
Base part number Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFP4127PbF
TO-247AC
Tube
25
IRFP4127PbF
VDSS
200V
RDS(on) typ.
17m

max
21m

ID
75A
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
75
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
53
IDM
Pulsed Drain Current 
300
PD @TC = 25°C
Maximum Power Dissipation
341
W
Linear Derating Factor
2.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
57
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175  
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
 
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
244 
mJ
Thermal Resistance  
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
0.4
°C/W
RCS
Case-to-Sink, Flat Greased Surface
0.24
–––
RJA
Junction-to-Ambient 
–––
40
°C  
S
G
D
 
1
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March 09, 2015


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