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IRFP4410ZPBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP4410ZPBF
상세설명  High Efficiency Synchronous Rectification in SMPS
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP4410ZPBF 데이터시트(HTML) 1 Page - International Rectifier

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03/07/08
www.irf.com
1
HEXFET® Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
IRFP4410ZPbF
VDSS
100V
RDS(on) typ.
7.2m
:
m ax.
9.0m
:
ID (Silicon Limited)
97A
GD
S
Gate
Drain
Source
S
D
G
TO-247AC
S
D
G
D
Absolute Maxim um Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
I
DM
Pulsed Drain Current
™
PD @TC = 25°C
Maximum Power Dis sipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junc tion and
°C
T
STG
Storage Temperature Range
Soldering T emperature, for 10 s econds
(1.6mm from cas e)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (T her mally limited)
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
EAR
Repetitive Av alanche Energy
f
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RπJC
Junction-to-Case
j
–––
0.65
RπCS
Case-to-Sink, Flat Greased Surface
0.24
–––
°C/W
RπJA
Junction-to-Ambient
j
–––
40
242
See Fig. 14, 15, 22a, 22b,
230
16
-55 to + 175
± 20
1.5
10lb
xin (1.1Nxm)
300
Max.
97
69
390
PD - 97309A


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