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IRFP4568PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRFP4568PBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 8 page IRFP4568PbF 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.144mH RG = 25Ω, IAS = 103A, VGS =10V. Part not recommended for use above this value. ISD ≤ 103A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 4.8 5.9 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.0 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 162 ––– ––– S Qg Total Gate Charge ––– 151 227 Qgs Gate-to-Source Charge ––– 52 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 55 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 96 ––– td(on) Turn-On Delay Time ––– 27 ––– tr Rise Time ––– 119 ––– td(off) Turn-Off Delay Time ––– 47 ––– tf Fall Time ––– 84 ––– Ciss Input Capacitance ––– 10470 ––– Coss Output Capacitance ––– 977 ––– Crss Reverse Transfer Capacitance ––– 203 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) h ––– 897 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) g ––– 1272 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 110 ––– TJ = 25°C VR = 100V, ––– 133 ––– TJ = 125°C IF = 103A Qrr Reverse Recovery Charge ––– 515 ––– TJ = 25°C di/dt = 100A/µs f ––– 758 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 8.8 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) nC ––– ––– ––– ––– 171 684 pF A A ns µA nA nC ns Conditions VDS = 50V, ID = 103A ID = 103A VGS = 20V VGS = -20V MOSFET symbol showing the VDS = 75V Conditions VGS = 10V f VGS = 0V VDS = 50V ƒ = 1.0MHz, (See Fig 5) VGS = 0V, VDS = 0V to 120V h(SeeFig.11) VGS = 0V, VDS = 0V to 120V g TJ = 25°C, IS = 103A, VGS = 0V f integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mA VGS = 10V, ID = 103A f VDS = VGS, ID = 250µA VDS =150V, VGS = 0V VDS = 150V, VGS = 0V, TJ = 125°C ID =103A RG =1.0Ω VGS = 10V f VDD = 98V ID = 103A, VDS =0V, VGS = 10V f |
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