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IRFP4868PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRFP4868PBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 9 page IRFP4868PbF 2 www.irf.com © 2012 International Rectifier October 30, 2012 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.29 ––– V/°C Reference to 25°C, ID = 5mA RDS(on) Static Drain-to-Source On-Resistance ––– 25.5 32 m VGS = 10V, ID = 42A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 300V, VGS = 0V ––– ––– 250 VDS = 300V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Internal Gate Resistance ––– 1.1 ––– Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 80 ––– ––– S VDS = 50V, ID = 42A Qg Total Gate Charge ––– 180 270 nC ID = 42A Qgs Gate-to-Source Charge ––– 60 ––– VDS =150V Qgd Gate-to-Drain ("Miller") Charge ––– 57 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 123 ––– ID = 42A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time ––– 24 ––– ns VDD = 195V tr Rise Time ––– 16 ––– ID = 42A td(off) Turn-Off Delay Time ––– 62 ––– RG = 1.0 tf Fall Time ––– 45 ––– VGS = 10V Ciss Input Capacitance ––– 10774 ––– pF VGS = 0V Coss Output Capacitance ––– 612 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 193 ––– ƒ = 1.0 MHz, See Fig. 5 Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 406 ––– VGS = 0V, VDS = 0V to 240V , See Fig. 11 Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 710 ––– VGS = 0V, VDS = 0V to 240V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 70 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 280 A integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 42A, VGS = 0V trr Reverse Recovery Time ––– 351 ––– ns TJ = 25°C ––– 454 ––– TJ = 125°C Qrr Reverse Recovery Charge ––– 2520 ––– nC TJ = 25°C ––– 3686 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 16 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) dv/dt Peak Diode Recovery ––– 7.3 ––– V/ns TJ = 25°C, IS = 42A, VDS = 300V Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 1.2mH RG = 50, IAS = 42A, VGS =10V. Part not recommended for use above this value. ISD ≤ 42A, di/dt ≤ 1706A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. RJC value shown is at time zero. D S G VR = 255V, IF = 42A di/dt = 100A/µs |
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