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IRFP7718PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP7718PBF
상세설명  Brushed Motor drive applications
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP7718PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP7718PbF
2
www.irf.com © 2015 International Rectifier
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February 19, 2015
Absolute Maximium Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
355
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
250
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
195
IDM
Pulsed Drain Current 
1590
PD @TC = 25°C
Maximum Power Dissipation
517
W
Linear Derating Factor
3.5
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
 
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
1160
mJ
EAS (Thermally limited)
Single Pulse Avalanche Energy 
2004
IAR
Avalanche Current 
See Fig 14, 15, 23a, 23b
A
EAR
Repetitive Avalanche Energy 
mJ
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
0.29
°C/W  
RCS
Case-to-Sink, Flat Greased Surface
0.24
–––
RJA
Junction-to-Ambient 
–––
40
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
42
–––
mV/°C Reference to 25°C, ID = 2mA 
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.45
1.80
VGS = 10V, ID = 100A 
–––
1.60
–––
VGS = 6V, ID = 50A 
VGS(th)
Gate Threshold Voltage
2.1
–––
3.7
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS =75 V, VGS = 0V
–––
–––
150
VDS =75V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Gate Resistance
–––
0.9
–––

m

Notes:

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 233µH, RG = 50, IAS = 100A, VGS =10V.

ISD  100A, di/dt  1279A/µs, VDD  V(BR)DSS, TJ 175°C.

Pulse width
 400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 63A, VGS =10V. .
Pulse drain current is limited at 780A by source bonding technology.


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