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IRFP7718PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRFP7718PBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 10 page IRFP7718PbF 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 Absolute Maximium Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 355 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 250 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195 IDM Pulsed Drain Current 1590 PD @TC = 25°C Maximum Power Dissipation 517 W Linear Derating Factor 3.5 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 1160 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 2004 IAR Avalanche Current See Fig 14, 15, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.29 °C/W RCS Case-to-Sink, Flat Greased Surface 0.24 ––– RJA Junction-to-Ambient ––– 40 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 42 ––– mV/°C Reference to 25°C, ID = 2mA RDS(on) Static Drain-to-Source On-Resistance ––– 1.45 1.80 VGS = 10V, ID = 100A ––– 1.60 ––– VGS = 6V, ID = 50A VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =75 V, VGS = 0V ––– ––– 150 VDS =75V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 0.9 ––– m Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 233µH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 1279A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 63A, VGS =10V. . Pulse drain current is limited at 780A by source bonding technology. |
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