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IRFP9140NPBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP9140NPBF
상세설명  ADVANCED PROCESS TECHNOLOGY
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP9140NPBF 데이터시트(HTML) 1 Page - International Rectifier

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IRFP9140NPbF
HEXFET® Power MOSFET
PD - 95665
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
VDSS = -100V
RDS(on) = 0.117Ω
ID = -23A
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
P-Channel
l
Fast Switching
l
Fully Avalanche Rated
l
Lead-Free
Description
TO-247AC
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-23
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
-16
A
IDM
Pulsed Drain Current …
-76
PD @TC = 25°C
Power Dissipation
140
W
Linear Derating Factor
0.91
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy‚…
430
mJ
IAR
Avalanche Current
-11
A
EAR
Repetitive Avalanche Energy
14
mJ
dv/dt
Peak Diode Recovery dv/dt ƒ…
-5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.1
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
7/30/04
S
D
G


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