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4 / 16 page BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 4 of 16 NXP Semiconductors BAP55LX Silicon PIN diode VR =0 V; Tj =25 C. Fig 2. Diode capacitance as a function of frequency; typical values f (MHz) 0 4000 3000 1000 2000 001aan470 0.2 0.3 0.1 0.4 0.5 Cd (pF) 0 f=1MHz; Tj =25 C. f = 100 MHz; Tj =25 C. Fig 3. Diode capacitance as a function of reverse voltage; typical values Fig 4. Forward resistance as a function of forward current; typical values VR (V) 020 15 510 001aag762 200 100 300 400 Cd (fF) 0 If (mA) 10−1 102 10 1 001aag763 10 1 102 rD ( Ω) 10−1 |
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