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BAP55LX 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BAP55LX 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 16 page BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 3 of 16 NXP Semiconductors BAP55LX Silicon PIN diode 7. Characteristics Table 6. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - 0.95 1.1 V IR reverse current VR = 20 V - - 10 nA VR =50V - - 100 nA Cd diode capacitance see Figure 3; f = 1 MHz; VR = 0 V - 0.28 - pF VR = 1 V - 0.23 - pF VR =20V - 0.18 0.28 pF rD diode forward resistance see Figure 4; f = 100 MHz; IF = 0.5 mA - 3.3 4.5 IF =1mA - 2.2 3.3 IF =10mA - 0.8 1.2 IF = 100 mA - 0.5 0.8 ISL isolation see Figure 5;VR =0 V; f = 900 MHz - 19 - dB f = 1800 MHz - 14 - dB f = 2450 MHz - 12 - dB Lins insertion loss see Figure 6;IF =0.5 mA; f = 900 MHz - 0.24 - dB f = 1800 MHz - 0.25 - dB f = 2450 MHz - 0.26 - dB Lins insertion loss see Figure 6;IF =1mA; f = 900 MHz - 0.17 - dB f = 1800 MHz - 0.18 - dB f = 2450 MHz - 0.19 - dB Lins insertion loss see Figure 6;IF =10mA; f = 900 MHz - 0.08 - dB f = 1800 MHz - 0.09 - dB f = 2450 MHz - 0.10 - dB Lins insertion loss see Figure 6;IF = 100 mA; f = 900 MHz - 0.05 - dB f = 1800 MHz - 0.07 - dB f = 2450 MHz - 0.08 - dB L charge carrier life time when switched from IF =10mA to IR =6mA; RL = 100 ; measured at IR =3mA 0.225 0.27 - s LS series inductance IF = 100 mA; f = 100 MHz - 0.4 - nH |
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