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IRL40B215 데이터시트(PDF) 2 Page - International Rectifier |
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IRL40B215 데이터시트(HTML) 2 Page - International Rectifier |
2 / 10 page 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 IRL40B215 Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that Current imitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.033mH, RG = 50, IAS = 98A, VGS =10V. ISD 98A, di/dt 1005A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 28A, VGS =10V. Pulse drain current is limited at 480A by source bonding technology. Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 164 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 116 IDM Pulsed Drain Current 656 PD @TC = 25°C Maximum Power Dissipation 143 W Linear Derating Factor 0.95 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 161 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 386 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 1.05 °C/W RCS Case-to-Sink, Flat Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C Reference to 25°C, ID = 5mA RDS(on) ––– 2.2 2.7 m VGS = 10V, ID = 98A ––– 2.8 3.5 VGS = 4.5V, ID = 49A VGS(th) Gate Threshold Voltage 1.0 ––– 2.4 V VDS = VGS, ID = 100µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =40 V, VGS = 0V ––– ––– 150 VDS =40V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.0 ––– Static Drain-to-Source On-Resistance |
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