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IRL7486MPBF 데이터시트(PDF) 3 Page - International Rectifier

부품명 IRL7486MPBF
상세설명  Brushed Motor drive applications
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRL7486MPBF 데이터시트(HTML) 3 Page - International Rectifier

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IRL7486MTRPbF
 
3
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May 14, 2015
D
S
G
Dynamic @ TJ = 25°C (unless otherwise specified)
   
 
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
427
–––
–––
S
VDS = 10V, ID = 123A
Qg
Total Gate Charge
–––
76
111
nC
ID = 123A
Qgs
Gate-to-Source Charge
–––
27
–––
VDS = 20V
Qgd
Gate-to-Drain ("Miller") Charge
–––
33
–––
VGS = 4.5V 
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
41
–––
ID = 123A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
35
–––
ns
VDD = 20V
tr
Rise Time
–––
110
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
54
–––
RG = 2.7
tf
Fall Time
–––
47
–––
VGS = 4.5V 
Ciss
Input Capacitance
––– 6904 –––
pF
VGS = 0V
Coss
Output Capacitance
–––
939
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
607
–––
ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1150 –––
VGS = 0V, VDS = 0V to 32V 
Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 1376 –––
VGS = 0V, VDS = 0V to 32V 
Diode Characteristics
   
 
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
104
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
836
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ= 25°C,IS =123A, VGS = 0V
dv/dt
Peak Diode Recovery 
–––
3.6
––– V/ns
TJ =150°C,IS =123A,
VDS = 40V
trr
Reverse Recovery Time
–––
43
–––
ns
TJ = 25° C VR = 34V,
–––
44
–––
TJ = 125°C IF = 123A
Qrr
Reverse Recovery Charge
–––
55
–––
TJ = 25°C di/dt = 100A/µs 
–––
56
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.1
–––
A
TJ = 25°C
nC
Notes:

Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.011mH
RG = 50, IAS = 123A, VGS =10V.
ISD ≤ 123A, di/dt ≤ 1056A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS.

Coss eff. (ER) is a fixed capacitance that gives the
same energy as Coss while VDS is rising from 0 to
80% VDSS.

Ris measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L= 0.011mH, RG = 50, IAS = 123A,
VGS =10V.
Limited by TJmax, starting TJ = 25°C, L = 1.0mH
RG = 50, IAS = 20A, VGS =10V.


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