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IRL7486MPBF 데이터시트(PDF) 3 Page - International Rectifier |
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IRL7486MPBF 데이터시트(HTML) 3 Page - International Rectifier |
3 / 11 page IRL7486MTRPbF 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 D S G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 427 ––– ––– S VDS = 10V, ID = 123A Qg Total Gate Charge ––– 76 111 nC ID = 123A Qgs Gate-to-Source Charge ––– 27 ––– VDS = 20V Qgd Gate-to-Drain ("Miller") Charge ––– 33 ––– VGS = 4.5V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 41 ––– ID = 123A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time ––– 35 ––– ns VDD = 20V tr Rise Time ––– 110 ––– ID = 30A td(off) Turn-Off Delay Time ––– 54 ––– RG = 2.7 tf Fall Time ––– 47 ––– VGS = 4.5V Ciss Input Capacitance ––– 6904 ––– pF VGS = 0V Coss Output Capacitance ––– 939 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 607 ––– ƒ = 1.0MHz Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1150 ––– VGS = 0V, VDS = 0V to 32V Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1376 ––– VGS = 0V, VDS = 0V to 32V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 104 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 836 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ= 25°C,IS =123A, VGS = 0V dv/dt Peak Diode Recovery ––– 3.6 ––– V/ns TJ =150°C,IS =123A, VDS = 40V trr Reverse Recovery Time ––– 43 ––– ns TJ = 25° C VR = 34V, ––– 44 ––– TJ = 125°C IF = 123A Qrr Reverse Recovery Charge ––– 55 ––– TJ = 25°C di/dt = 100A/µs ––– 56 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.1 ––– A TJ = 25°C nC Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.011mH RG = 50, IAS = 123A, VGS =10V. ISD ≤ 123A, di/dt ≤ 1056A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ = 25°C, L= 0.011mH, RG = 50, IAS = 123A, VGS =10V. Limited by TJmax, starting TJ = 25°C, L = 1.0mH RG = 50, IAS = 20A, VGS =10V. |
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