전자부품 데이터시트 검색엔진 |
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IRLML2060PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLML2060PBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 10 page IRLML2060TRPbF 2 www.irf.com Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C ––– 356 480 ––– 475 640 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V IDSS ––– ––– 20 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 7.5 ––– gfs Forward Transconductance 1.6 ––– ––– S Qg Total Gate Charge ––– 0.67 ––– Qgs Gate-to-Source Charge ––– 0.18 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 0.40 ––– td(on) Turn-On Delay Time ––– 4.9 ––– tr Rise Time ––– 3.8 ––– td(off) Turn-Off Delay Time ––– 3.7 ––– tf Fall Time ––– 2.8 ––– Ciss Input Capacitance ––– 64 ––– Coss Output Capacitance ––– 13 ––– Crss Reverse Transfer Capacitance ––– 6.6 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 14 21 ns Qrr Reverse Recovery Charge ––– 8.3 12 nC di/dt = 100A/μs d VGS = 16V VGS = -16V TJ = 25°C, IS = 1.2A, VGS = 0V d integral reverse p-n junction diode. VDS = 25V, ID = 1.2A ID = 1.2A ID = 1.2A TJ = 25°C, VR = 30V, IF=1.3A MOSFET symbol showing the VDS = 30V Conditions VGS = 4.5V VGS = 0V VDS = 25V ƒ = 1.0MHz RG = 6.8 VGS = 4.5V d Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5.0mA VGS = 10V, ID = 1.2A d VDS = VGS, ID = 25μA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C RDS(on) VGS = 4.5V, ID = 0.96A d Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current μA m VDD = 30Vd nA nC ns pF A 1.2 4.8 ––– ––– ––– ––– |
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