IRLML6302PBF-1 datasheet(2/8 Pages) IRF

부품명	IRLML6302PBF-1

상세설명	Compatible with Existing Surface Mount Techniques

Download	8 Pages

Scroll/Zoom	100%

제조업체	IRF [International Rectifier]

홈페이지	http://www.irf.com

Logo

2 / 8 page

IRLML6302PbF-1

2

October 28, 2014

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-20

V

VGS = 0V, ID = -250µA

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

-4.9 mV/°C Reference to 25°C, ID = -1mA

0.60

VGS = -4.5V, ID = -0.61A

0.90

VGS = -2.7V, ID = -0.31A

VGS(th)

Gate Threshold Voltage

-0.70 -1.5

V

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

0.56

S

VDS = -10V, ID = -0.31A

-1.0

VDS = -16V, VGS = 0V

-25

VDS = -16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

-100

VGS = -12V

Gate-to-Source Reverse Leakage

100

VGS = 12V

Qg

Total Gate Charge

2.4

3.6

ID = -0.61A

Qgs

Gate-to-Source Charge

0.56 0.84

nC

VDS = -16V

Qgd

Gate-to-Drain ("Miller") Charge

1.0

1.5

VGS = -4.5V, See Fig. 6 and 9

td(on)

Turn-On Delay Time

13

VDD = -10V

tr

Rise Time

18

ID = -0.61A

td(off)

Turn-Off Delay Time

22

RG = 6.2Ω

tf

Fall Time

22

RD = 16Ω, See Fig. 10

Ciss

Input Capacitance

97

VGS = 0V

Coss

Output Capacitance

53

pF

VDS = -15V

Crss

Reverse Transfer Capacitance

28

= 1.0MHz, See Fig. 5

Ω

µA

nA

IGSS

IDSS

Drain-to-Source Leakage Current

RDS(ON)

Static Drain-to-Source On-Resistance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Notes:

Repetitive rating; pulse width

limited by max. junction temperature. ( See fig. 11 )

ISD ≤ -0.61A, di/dt ≤ 76A/µs, VDD≤V(BR)DSS,

TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 5sec.

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

––– ––– -1.2

V

TJ = 25°C, IS = -0.61A, VGS = 0V

trr

Reverse Recovery Time

–––

35

53

ns

TJ = 25°C, IF = -0.61A

Qrr

Reverse Recovery Charge

–––

26

39

nC

di/dt = -100A/μs

Source-Drain Ratings and Characteristics

A

S

D

G

-4.9

-0.54

ns

유사한 부품 번호 - IRLML6302PBF-1

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRLML6302PBF	636Kb / 8P	HEXFET Power MOSFET
	IRLML6302PBF	251Kb / 9P	ULTRA LOW ON RESISFANCE
	IRLML6302PBF	285Kb / 8P	technology, Ultra Low On-Resistance, P-Channel MOSFET
	IRLML6302PBF	251Kb / 9P	ULTRA LOW ON RESISFANCE

More results

유사한 설명 - IRLML6302PBF-1

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRF6674TR1PBF	255Kb / 9P	Compatible with existing Surface Mount Techniques
	IRF6635TR1PBF	253Kb / 10P	Compatible with existing Surface Mount Techniques
	IRFH8321PBF	238Kb / 9P	Compatible with Existing Surface Mount Techniques
	IRFML8244PBF	202Kb / 10P	Compatible with existing Surface Mount Techniques
	IRFHM4231PBF	572Kb / 9P	Compatible with Existing Surface Mount Techniques
	IRFHM8228PBF	672Kb / 10P	Compatible with Existing Surface Mount Techniques
	IRFHM9391PBF	564Kb / 9P	Compatible with Existing Surface Mount Techniques
	IRLML2244PBF	240Kb / 10P	Compatible with existing Surface Mount Techniques
	IRLML2246PBF-1	204Kb / 9P	Compatible with Existing Surface Mount Techniques
	IRLML6401PBF-1	195Kb / 8P	Compatible with Existing Surface Mount Techniques
	IRLML6402PBF-1	193Kb / 8P	Compatible with Existing Surface Mount Techniques

More results

IRLML6302PBF-1 데이터시트(PDF) 2 Page - International Rectifier

IRLML6302PBF-1 데이터시트(HTML) 2 Page - International Rectifier

유사한 부품 번호 - IRLML6302PBF-1

유사한 설명 - IRLML6302PBF-1

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL