BYC30X-600P_15 datasheet(5/9 Pages) PHILIPS

부품명	BYC30X-600P

상세설명	Hyperfast power diode

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5 / 9 page

NXP Semiconductors

BYC30X-600P

Hyperfast power diode

BYC30X-600P

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Product data sheet

4 February 2013

5 / 9

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 30 A; Tj = 150 °C; Fig. 6

-

1.38

1.8

V

VR = 600 V; Tj = 25 °C

-

10

µA

IR

reverse current

VR = 600 V; Tj = 150 °C

-

600

µA

Dynamic characteristics

IF = 30 A; VR = 200 V; dIF/dt = 200 A/

µs; Tj = 25 °C; Fig. 7

-

50

-

nC

Qr

recovered charge

IF = 30 A; VR = 200 V; dIF/dt = 200 A/

µs; Tj = 125 °C; Fig. 7

-

280

-

nC

IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;

Tj = 25 °C; Fig. 7

-

35

ns

IF = 30 A; VR = 200 V; dIF/dt = 200 A/

µs; Tj = 25 °C; Fig. 7

-

35

ns

trr

reverse recovery time

IF = 30 A; VR = 200 V; dIF/dt = 200 A/

µs; Tj = 125 °C; Fig. 7

-

70

-

ns

IF = 30 A; VR = 200 V; dIF/dt = 200 A/

µs; Tj = 25 °C; Fig. 7

-

3.5

-

A

IRM

peak reverse recovery

current

IF = 30 A; VR = 200 V; dIF/dt = 200 A/

µs; Tj = 125 °C; Fig. 7

-

7.6

-

A

003aak742

VF (V)

0

3

2

1

20

10

30

40

IF

(A)

0

(1)

(2)

(3)

Fig. 6. Forward current as a function of forward

voltage

003aac562

trr

time

100 %

25 %

IF

dlF

dt

IR

IRM

Qr

Fig. 7. Reverse recovery definitions; ramp recovery

유사한 부품 번호 - BYC30X-600P_15

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BYC30X-600P 데이터시트(PDF) 5 Page - NXP Semiconductors

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유사한 부품 번호 - BYC30X-600P_15

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