74HC_HCT3G34_15 datasheet(6/14 Pages) PHILIPS

부품명	74HC_HCT3G34

상세설명	Triple buffer gate

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74HC_HCT3G34

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Product data sheet

Rev. 6 — 11 December 2013

6 of 14

NXP Semiconductors

74HC3G34; 74HCT3G34

Triple buffer gate

[1]

All typical values are measured at Tamb = 25 C.

[2]

tpd is the same as tPLH and tPHL.

[3]

tt is the same as tTLH and tTHL.

[4]

CPD is used to determine the dynamic power dissipation (PD in W).

PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

(C

L  VCC

2

 f

o) = sum of outputs.

12. Waveforms

74HCT3G34

tpd

propagation delay nA to nY; see Figure 5

[2]

VCC = 4.5 V

-

10

23

-

29

ns

tt

transition time

nY; VCC = 4.5 V; see Figure 5

[3]

-6

19

-

25

ns

CPD

power dissipation

capacitance

VI =GND to VCC  1.5 V

[4]

-9-

-

pF

Table 8.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.

Symbol Parameter

Conditions

40 C to +85 C

40 C to +125 C Unit

Min

Typ[1]

Max

Min

Max

Measurement points are given in Table 9.

Fig 5.

Propagation delay data input (nA) to data output (nY) and transition time output (nY)

001aad982

tPLH

tPHL

VM

90 %

10 %

VM

output

nY

input

nA

VI

GND

VOH

VOL

tTLH

tTHL

Table 9.

Measurement points

Type

Input

Output

VM

74HC3G34

0.5

 V

CC

0.5

 V

CC

74HCT3G34

1.3 V

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