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IRF7749L1PBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF7749L1PBF
상세설명  Optimized for Synchronous Rectification
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

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DirectFET
™ Power MOSFET ‚
Typical values (unless otherwise specified)
DirectFET
™ ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline

l RoHS Compliant, Halogen Free
‚
l Lead-Free (Qualified up to 260°C Reflow)

l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

l Industrial Qualified
Description
The IRF7749L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF7749L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance power converters.
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.035mH, RG = 25Ω, IAS = 120A.
Notes:
Fig 2. Typical On-Resistance vs. Drain Current
SB
SC
M2
M4
L4
L6
L8
D
S
G
D
S
S
S
S
S
S
S
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
A
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited) f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
120
375
260
Max.
140
33
800
±20
60
200
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate-to-Source Voltage (V)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
TJ = 25°C
TJ = 125°C
ID = 120A
40
80
120
160
200
ID, Drain Current (A)
0.80
1.00
1.20
1.40
1.60
TC= 25°C
VGS = 6.0V
VGS = 8.0V
VGS = 10V
VGS = 14V
VDSS
VGS
RDS(on)
60V min
±20V max 1.1mΩ@ 10V
Qg tot
Qgd
Vgs(th)
200nC
71nC
2.9V
IRF7749L1TRPbF
Applications
1
www.irf.com
© 2012 International Rectifier
February 18, 2013
Ordering Information
Base part number
Package Type
Orderable Part Number
Form
Quantity
IRF7749L1TRPbF
DirectFET Large Can
Tape and Reel
4000
IRF7749L1TRPbF
Standard Pack


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