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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7759L2PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7759L2PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 11 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF7759L2PbF Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 75 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.8 2.3 m Ω VGS(th) Gate Threshold Voltage 2.0 3.0 4.0 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 74 ––– ––– S Qg Total Gate Charge ––– 200 300 Qgs1 Pre-Vth Gate-to-Source Charge ––– 37 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 11 ––– Qgd Gate-to-Drain Charge ––– 62 93 Qgodr Gate Charge Overdrive ––– 91 ––– See Fig. 9 Qsw Switch Charge (Qgs2 + Qgd) ––– 73 ––– Qoss Output Charge ––– 60 ––– nC RG Gate Resistance ––– 1.1 ––– Ω td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 37 ––– td(off) Turn-Off Delay Time ––– 80 ––– tf Fall Time ––– 33 ––– Ciss Input Capacitance ––– 12222 ––– Coss Output Capacitance ––– 1465 ––– Crss Reverse Transfer Capacitance ––– 609 ––– Coss Output Capacitance ––– 7457 ––– Coss Output Capacitance ––– 955 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 64 96 ns Qrr Reverse Recovery Charge ––– 150 225 nC pF A ––– ––– 160 ––– ––– 640 μA nA nC ns MOSFET symbol RG=1.8Ω VDS = 25V Conditions VGS = 0V, VDS = 60V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VDS = 16V, VGS = 0V VDD = 38V, VGS = 10VÃi VGS = 0V ƒ = 1.0MHz ID = 96A VDS = 75V, VGS = 0V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 2mA VGS = 10V, ID = 96A i VDS = VGS, ID = 250μA TJ = 25°C, IF = 96A, VDD = 38V di/dt = 100A/μs i TJ = 25°C, IS = 96A, VGS = 0V i showing the integral reverse p-n junction diode. ID = 96A VDS = 60V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 25V, ID = 96A VDS = 38V |
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