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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFB3256PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRFB3256PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFB3256PbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.12mH RG = 50 Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD ≤ 75A, di/dt ≤ 890A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. S D G Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C. RθJC value shown is at time zero. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 29 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.7 3.4 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 88 ––– ––– S RG Internal Gate Resistance ––– 0.79 ––– Ω IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 130 195 nC Qgs Gate-to-Source Charge ––– 31 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 42 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 88 ––– td(on) Turn-On Delay Time ––– 22 ––– ns tr Rise Time ––– 77 ––– td(off) Turn-Off Delay Time ––– 55 ––– tf Fall Time ––– 64 ––– Ciss Input Capacitance ––– 6600 ––– pF Coss Output Capacitance ––– 720 ––– Crss Reverse Transfer Capacitance ––– 400 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1080 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1400 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 206 A (Body Diode) ISM Pulsed Source Current ––– ––– 820 A (Body Diode)Ãd VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 43 ––– ns TJ = 25°C VR = 51V, ––– 53 ––– TJ = 125°C IF = 75A Qrr Reverse Recovery Charge ––– 58 ––– nC TJ = 25°C di/dt = 100A/μs f ––– 65 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.4 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) MOSFET symbol showing the VDS = 30V Conditions VGS = 10V f VGS = 0V VDS = 48V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 48V h, See Fig. 11 VGS = 0V, VDS = 0V to 48V g TJ = 25°C, IS = 75A, VGS = 0V f integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 75A f VDS = VGS, ID = 150μA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C VDS = 25V, ID = 75A ID = 75A RG = 2.7Ω VGS = 10V f VDD = 39V ID = 75A, VDS =0V, VGS = 10V Conditions ID = 75A VGS = 20V VGS = -20V |
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