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IRFB4212PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFB4212PBF
상세설명  Key parameters optimized for Class-D audio amplifier applications
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

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IRFB4212PbF
2
www.irf.com
S
D
G
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS = 13A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
„ Rθ is measured at TJ of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.09
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
58
72.5
m
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-13
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
gfs
Forward Transconductance
11
–––
–––
S
Qg
Total Gate Charge
–––
15
23
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.3
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.4
–––
nC
Qgd
Gate-to-Drain Charge
–––
6.9
–––
Qgodr
Gate Charge Overdrive
–––
3.4
–––
See Fig. 6 and 19
Qsw
Switch Charge (Qgs2 + Qgd)
–––
8.3
–––
RG(int)
Internal Gate Resistance
–––
2.2
–––
td(on)
Turn-On Delay Time
–––
7.7
–––
tr
Rise Time
–––
28
–––
td(off)
Turn-Off Delay Time
–––
14
–––
ns
tf
Fall Time
–––
3.9
–––
Ciss
Input Capacitance
–––
550
–––
Coss
Output Capacitance
–––
66
–––
pF
Crss
Reverse Transfer Capacitance
–––
35
–––
Coss
Effective Output Capacitance
–––
350
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ãg
A
EAR
Repetitive Avalanche Energy
g
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C Continuous Source Current
–––
–––
18
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
57
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
41
62
ns
Qrr
Reverse Recovery Charge
–––
69
100
nC
MOSFET symbol
RG = 2.5Ω
VDS = 50V, ID = 13A
Conditions
and center of die contact
VDD = 50V, VGS = 10VÃe
VDS = 80V
VDS = 50V
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 0V, VDS = 0V to 80V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
ID = 13A
VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 13A
e
TJ = 25°C, IF = 13A
di/dt = 100A/µs
e
TJ = 25°C, IS = 13A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
ID = 13A
Typ.
Max.
ƒ = 1.0MHz,
See Fig.5
–––
25
See Fig. 14, 15, 17a, 17b


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