전자부품 데이터시트 검색엔진 |
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IRFE130 데이터시트(PDF) 2 Page - International Rectifier |
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IRFE130 데이터시트(HTML) 2 Page - International Rectifier |
2 / 7 page IRFE130 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case — — 5.0 RthJ-PCB Junction to PC Board — — 19"" Soldered to a copper clad PC board °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 8.0 ISM Pulse Source Current (Body Diode) ➀ —— 3 2 VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS =8.0A, VGS = 0V ➃ trr Reverse Recovery Time — — 300 nS Tj = 25°C, IF =8.0A, di/dt ≤100A/µs QRR Reverse Recovery Charge — — 970 µc VDD ≤50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.11 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.18 VGS = 10V, ID =5.0A➃ Resistance — — 0.207 VGS =10V, ID =8.0A ➃ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA gfs Forward Transconductance 3.0 — — S ( ) VDS > 15V, IDS =5.0A➃ IDSS Zero Gate Voltage Drain Current — — 2 5 VDS=80V, VGS=0V — — 250 VDS =80V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS =20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS =-20V Qg Total Gate Charge — — 2 9 VGS =10V, ID= 8.0A Qgs Gate-to-Source Charge — — 6.5 nC VDS =50V Qgd Gate-to-Drain (‘Miller’) Charge — — 1 7 td(on) Turn-On Delay Time — — 3 0 VDD =50V, ID =8.0A, t r Rise Time — — 7 5 RG =7.5Ω td(off) Turn-Off Delay Time — — 4 0 tf Fall Time — — 4 5 LS + LD Total Inductance — 6.1 — Ciss Input Capacitance — 660 VGS = 0V, VDS =25V Coss Output Capacitance — 260 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 5 1 — nA nH ns µA Ω Measured from the center of drain pad to center of source pad |
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