IRHNJ67234, JANSR2N7593U3

Pre-Irradiation

2

www.irf.com

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

12.4

ISM

Pulse Source Current (Body Diode)

À

—

—

49.6

VSD Diode Forward Voltage

—

—

1.2

V

trr

Reverse Recovery Time

—

—

350

ns

Tj = 25°C, IF = 12.4, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

5.15

µCVDD ≤ 50V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

For footnotes refer to the last page

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

* Current is limited by package

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

250

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

0.24

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.21

Ω

VGS = 12V, ID = 7.8A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 1.0mA

∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient

—

-9.16

—

mV/°C

gfs

Forward Transconductance

8.8

—

—

S

VDS = 15V, IDS = 7.8A Ã

IDSS

Zero Gate Voltage Drain Current

—

—

10

VDS= 200V ,VGS=0V

——

25

VDS = 200V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

50

VGS = 12V, ID = 12.4A

Qgs

Gate-to-Source Charge

—

—

15

nC

VDS = 125V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

20

Turn-On Delay Time

—

—

25

VDD = 125V, ID = 12.4A,

tr

Rise Time

—

—

30

VGS = 12V, RG = 7.5Ω

Turn-Off Delay Time

—

—

60

tf

Fall Time

—

—

30

LS + LD

Total Inductance

—

4.0

—

Ciss

Input Capacitance

—

1445

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

187

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

2.4

—

nA

Ã

nH

ns

µA

Measured from the center of

drain pad to center of source pad

Rg

Gate Resistance

1.2

Ω

f = 1.0MHz, open drain

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—