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IRHNJ597130 데이터시트(PDF) 3 Page - International Rectifier |
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IRHNJ597130 데이터시트(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHNJ597130, JANSR2N7545U3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics 1. Part number IRHNJ597130 (JANSR2N7545U3) 2. Part number IRHNJ593130 (JANSF2N7545U3) Fig a. Single Event Effect, Safe Operating Area International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area For footnotes refer to the last page Ion LET Energy Range V DS (V) (MeV/(mg/cm2)) (MeV) (µm) @V GS =0V @V GS =5V @V GS =10V @V GS =15V @V GS =17.5V Br 37.9 252.6 33.1 -100 -100 -100 -100 -100 I 59.7 314 30.5 -100 -100 -100 -100 -75 Au 82.3 350 28.4 -100 -100 -100 -30 — -100 -25 — @V GS =20V Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter 100K Rads(Si)1 300KRads(Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — V VGS = 0V, ID = -1.0mA VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS =-20V IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS=-80V, VGS =0V RDS(on) Static Drain-to-Source à — 0.205 — 0.205 Ω VGS = -12V, ID =-8.0A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source à — 0.205 — 0.205 Ω VGS = -12V, ID =-8.0A On-State Resistance (SMD-0.5) VSD Diode Forward Voltage à — -5.0 — -5.0 V VGS = 0V, IS = -12.5A -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 25 VGS Br I Au |
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