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IRHNJ597130 데이터시트(PDF) 3 Page - International Rectifier

부품명 IRHNJ597130
상세설명  Simple Drive Requirements
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRHNJ597130 데이터시트(HTML) 3 Page - International Rectifier

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Pre-Irradiation
IRHNJ597130, JANSR2N7545U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHNJ597130 (JANSR2N7545U3)
2. Part number IRHNJ593130 (JANSF2N7545U3)
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Ion
LET
Energy
Range
V
DS
(V)
(MeV/(mg/cm2))
(MeV)
(µm)
@V
GS
=0V @V
GS
=5V @V
GS
=10V @V
GS
=15V @V
GS
=17.5V
Br
37.9
252.6
33.1
-100
-100
-100
-100
-100
I
59.7
314
30.5
-100
-100
-100
-100
-75
Au
82.3
350
28.4
-100
-100
-100
-30
-100
-25
@V
GS
=20V
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
100K Rads(Si)1
300KRads(Si)2
Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
-100
-100
V
VGS = 0V, ID = -1.0mA
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
-2.0
-5.0
VGS = VDS, ID = -1.0mA
IGSS
Gate-to-Source Leakage Forward
-100
-100
nA
VGS =-20V
IGSS
Gate-to-Source Leakage Reverse
100
100
VGS = 20 V
IDSS
Zero Gate Voltage Drain Current
-10
-10
µA
VDS=-80V, VGS =0V
RDS(on)
Static Drain-to-Source
Ã
0.205
0.205
VGS = -12V, ID =-8.0A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source
Ã
0.205
0.205
VGS = -12V, ID =-8.0A
On-State Resistance (SMD-0.5)
VSD
Diode Forward Voltage
Ã
-5.0
-5.0
V
VGS = 0V, IS = -12.5A
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
25
VGS
Br
I
Au


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