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IRHQ567110 데이터시트(PDF) 4 Page - International Rectifier |
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IRHQ567110 데이터시트(HTML) 4 Page - International Rectifier |
4 / 14 page IRHQ567110 Pre-Irradiation 4 www.irf.com Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter 100K Rads(Si)1 300K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 2.0 4.0 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V IDSS Zero Gate Voltage Drain Current — 10 — 10 µA VDS= 80V, VGS =0V RDS(on) Static Drain-to-Source à — 0.226 — 0.246 Ω VGS = 12V, ID = 2.9A On-State Resistance (TO-39) RDS(on) Static Drain-to-Source à — 0.27 — 0.29 Ω VGS = 12V, ID = 2.9A On-State Resistance (LCC-28) International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 1. Part number IRHQ567110 2. Part number IRHQ563110 Fig a. Typical Single Event Effect, Safe Operating Area VSD Diode Forward Voltage à — 1.2 — 1.2 V VGS = 0V, IS = 4.6A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Table 2. Typical Single Event Effect Safe Operating Area (Per Die) LET Energy RangeVDS (V) (MeV/(mg/cm 2)) (MeV) (µm) @VGS = @VGS = @VGS = @VGS = @VGS = 0V -5V -10V -15V -20V 38 ± 5% 300 ± 7.5% 38 ± 7.5% 100 100 100 100 100 61 ± 5% 330 ± 7.5% 31 ± 10% 100 100 100 35 25 84 ± 5% 350 ± 10% 28 ± 7.5% 100 100 80 25 - 0 20 40 60 80 100 120 -20 -15 -10 -5 0 Bias VGS (V) LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% |
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