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IRHQ567110 데이터시트(PDF) 4 Page - International Rectifier

부품명 IRHQ567110
상세설명  Simple Drive Requirements
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRHQ567110 데이터시트(HTML) 4 Page - International Rectifier

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IRHQ567110
Pre-Irradiation
4
www.irf.com
Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
100K Rads(Si)1
300K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
100
100
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
2.0
4.0
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
100
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
10
10
µA
VDS= 80V, VGS =0V
RDS(on)
Static Drain-to-Source
Ã
0.226
0.246
VGS = 12V, ID = 2.9A
On-State Resistance (TO-39)
RDS(on)
Static Drain-to-Source
Ã
0.27
0.29
VGS = 12V, ID = 2.9A
On-State Resistance (LCC-28)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHQ567110
2. Part number IRHQ563110
Fig a. Typical Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage
Ã
1.2
1.2
V
VGS = 0V, IS = 4.6A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
LET
Energy
RangeVDS (V)
(MeV/(mg/cm
2))
(MeV)
(µm)
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
-5V
-10V
-15V
-20V
38 ± 5%
300 ± 7.5%
38 ± 7.5%
100
100
100
100
100
61 ± 5%
330 ± 7.5%
31 ± 10%
100
100
100
35
25
84 ± 5%
350 ± 10%
28 ± 7.5%
100
100
80
25
-
0
20
40
60
80
100
120
-20
-15
-10
-5
0
Bias VGS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%


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