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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRHY57230CMSE 데이터시트(PDF) 1 Page - International Rectifier |
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IRHY57230CMSE 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 12 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.6 IDM Pulsed Drain Current À 48 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 60 mJ IAR Avalanche Current À 12 A EAR Repetitive Avalanche Energy À 7.5 mJ dv/dt Peak Diode Recovery dv/dt  5.4 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in./1.6mm from case for 10sec) Weight 4.3 (Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A RADIATION HARDENED JANSR2N7489T3 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) REF:MIL-PRF-19500/705 06/10/04 www.irf.com 1 TO-257AA Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight For footnotes refer to the last page IRHY57230CMSE Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57230CMSE 100K Rads (Si) 0.23 Ω 12A JANSR2N7489T3 TECHNOLOGY 55 PD - 93822B |
유사한 부품 번호 - IRHY57230CMSE |
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유사한 설명 - IRHY57230CMSE |
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