전자부품 데이터시트 검색엔진 |
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IRHYB67130CM 데이터시트(PDF) 2 Page - International Rectifier |
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IRHYB67130CM 데이터시트(HTML) 2 Page - International Rectifier |
2 / 9 page IRHYB67130CM Pre-Irradiation 2 www.irf.com Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 20* ISM Pulse Source Current (Body Diode) À —— 80 VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 20A, VGS = 0V Ã trr Reverse Recovery Time — — 250 ns Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 2.7 µCVDD ≤ 25V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Note: Corresponding Spice and Saber models are available on International Rectifier Web site. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 1.67 RthJA Junction-to-Ambient — — 80 Typical Socket Mount °C/W Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.12 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.042 Ω VGS = 12V, ID = 19A Resistance VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient — -8.72 — mV/°C gfs Forward Transconductance 14 — — S VDS = 10V, IDS = 19A Ã IDSS Zero Gate Voltage Drain Current — — 10 VDS= 80V ,VGS = 0V —— 25 VDS = 80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 50 VGS = 12V, ID = 20A Qgs Gate-to-Source Charge — — 15 nC VDS = 50V Qgd Gate-to-Drain (‘Miller’) Charge — — 12 td(on) Turn-On Delay Time — — 20 VDD = 50V, ID = 20A, tr Rise Time — — 50 VGS = 12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 35 tf Fall Time — — 15 LS + LD Total Inductance — 6.8 — Ciss Input Capacitance — 1710 — VGS = 0V, VDS = 25V Coss Output Capacitance — 343 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 6.5 — nA Ã nH ns µA Measured from Drain lead ( 6mm / 0.025 in from package ) to Source lead ( 6mm/ 0.025 in from package ) Rg Gate Resistance 1.1 Ω f = 1.0MHz, open drain * Current is limited by package |
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