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IRHYB67130CM 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRHYB67130CM
상세설명  Simple Drive Requirements
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRHYB67130CM 데이터시트(HTML) 2 Page - International Rectifier

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IRHYB67130CM
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
20*
ISM
Pulse Source Current (Body Diode)
À
——
80
VSD Diode Forward Voltage
1.2
V
Tj = 25°C, IS = 20A, VGS = 0V Ã
trr
Reverse Recovery Time
250
ns
Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
2.7
µCVDD ≤ 25V Ã
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
1.67
RthJA
Junction-to-Ambient
80
Typical Socket Mount
°C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
0.12
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.042
VGS = 12V, ID = 19A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
-8.72
mV/°C
gfs
Forward Transconductance
14
S
VDS = 10V, IDS = 19A Ã
IDSS
Zero Gate Voltage Drain Current
10
VDS= 80V ,VGS = 0V
——
25
VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
50
VGS = 12V, ID = 20A
Qgs
Gate-to-Source Charge
15
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
12
td(on)
Turn-On Delay Time
20
VDD = 50V, ID = 20A,
tr
Rise Time
50
VGS = 12V, RG = 7.5Ω
td(off)
Turn-Off Delay Time
35
tf
Fall Time
15
LS + LD
Total Inductance
6.8
Ciss
Input Capacitance
1710
VGS = 0V, VDS = 25V
Coss
Output Capacitance
343
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
6.5
nA
Ã
nH
ns
µA
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
Rg
Gate Resistance
1.1
f = 1.0MHz, open drain
* Current is limited by package


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