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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRHYB67134CM 데이터시트(PDF) 1 Page - International Rectifier |
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IRHYB67134CM 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 9 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 19 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 12 IDM Pulsed Drain Current À 76 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 67 mJ IAR Avalanche Current À 19 A EAR Repetitive Avalanche Energy À 7.5 mJ dv/dt Peak Diode Recovery dv/dt  7.8 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 3.7 (Typical) g °C A 06/15/10 www.irf.com 1 For footnotes refer to the last page Pre-Irradiation Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Light Weight International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Low-Ohmic TO-257AA Tabless RADIATION HARDENED IRHYB67134CM POWER MOSFET 150V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHYB67134CM 100K Rads (Si) 0.090 Ω 19A IRHYB63134CM 300K Rads (Si) 0.090 Ω 19A PD-96997A |
유사한 부품 번호 - IRHYB67134CM_15 |
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유사한 설명 - IRHYB67134CM_15 |
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