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IRHYS597034CM 데이터시트(PDF) 3 Page - International Rectifier |
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IRHYS597034CM 데이터시트(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHYS597034CM, JANSR2N7520T3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics 1. Part number IRHYS597034CM, JANSR2N7520T3 2. Part number IRHYS593034CM, JANSF2N7520T3 Fig a. Typical Single Event Effect, Safe Operating Area International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Table 2. Typical Single Event Effect Safe Operating Area Ion LET Energy Range VDS (V) (MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V Br 37.9 252.6 33.1 - 60 - 60 - 60 - 60 - 60 I 59.7 314 30.5 - 60 - 60 - 60 - 45 - 25 Au 82.3 350 28.4 - 60 - 60 - 60 — — -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 VGS Br I Au Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter 100KRads(Si)1 300KRads(Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage -60 — -60 — V VGS = 0V, ID = -1.0mA VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -4.0 VGS = VDS, ID = -1.0mA IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS =-20V IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS = -48V, VGS = 0V RDS(on) Static Drain-to-Source à — 0.087 — 0.087 Ω VGS = -12V, ID = -13A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source On-State — 0.087 — 0.087 Ω VGS = -12V, ID = -13A Resistance(Low-OhmicTO-257AA) VSD Diode Forward Voltage à — -5.0 — -5.0 V VGS = 0V, IS = -20A à |
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