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IRLZ24NSPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLZ24NSPBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 10 page IRLZ24NS/LPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.061 V/°C Reference to 25°C, ID = 1mA
0.060 VGS = 10V, ID = 11A 0.075 Ω VGS = 5.0V, ID = 11A 0.105 VGS = 4.0V, ID = 9.0A VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 8.3 S VDS = 25V, ID = 11A
25 VDS = 55V, VGS = 0V 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 nA VGS = 16V Gate-to-Source Reverse Leakage -100 VGS = -16V Qg Total Gate Charge 15 ID = 11A Qgs Gate-to-Source Charge 3.7 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge 8.5 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time 7.1 VDD = 28V tr Rise Time 74 ID = 11A td(off) Turn-Off Delay Time 20 RG = 12Ω, VGS = 5.0V tf Fall Time 29 RD = 2.4Ω, See Fig. 10
Between lead, and center of die contact Ciss Input Capacitance 480 VGS = 0V Coss Output Capacitance 130 pF VDS = 25V Crss Reverse Transfer Capacitance 61 = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS RDS(on) Static Drain-to-Source On-Resistance LS Internal Source Inductance 7.5 ns IDSS Drain-to-Source Leakage Current µA Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time 60 90 ns TJ = 25°C, IF = 11A Qrr Reverse Recovery Charge 130 200 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics S D G A 18 72 Pulse width ≤ 300µs; duty cycle ≤ 2%. Notes:
Uses IRLZ24N data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. I SD ≤ 11A, di/dt ≤ 290A/µs, V DD ≤ V(BR)DSS, TJ ≤ 175°C VDD = 25V, starting TJ = 25°C, L = 790µH RG = 25Ω, IAS = 11A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) |
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