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IRLZ24NSPBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRLZ24NSPBF
상세설명  Advanced Process Technology
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRLZ24NSPBF 데이터시트(HTML) 2 Page - International Rectifier

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IRLZ24NS/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061 –––
V/°C Reference to 25°C, ID = 1mA…
–––
––– 0.060
VGS = 10V, ID = 11A „
–––
––– 0.075
VGS = 5.0V, ID = 11A „
–––
––– 0.105
VGS = 4.0V, ID = 9.0A „
VGS(th)
Gate Threshold Voltage
1.0
––– 2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
8.3
––– –––
S
VDS = 25V, ID = 11A…
–––
–––
25
VDS = 55V, VGS = 0V
–––
––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -16V
Qg
Total Gate Charge
–––
–––
15
ID = 11A
Qgs
Gate-to-Source Charge
–––
––– 3.7
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
––– 8.5
VGS = 5.0V, See Fig. 6 and 13 „…
td(on)
Turn-On Delay Time
–––
7.1 –––
VDD = 28V
tr
Rise Time
–––
74
–––
ID = 11A
td(off)
Turn-Off Delay Time
–––
20
–––
RG = 12Ω, VGS = 5.0V
tf
Fall Time
–––
29
–––
RD = 2.4Ω, See Fig. 10 „…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
480 –––
VGS = 0V
Coss
Output Capacitance
–––
130 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
61
–––
ƒ = 1.0MHz, See Fig. 5…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
RDS(on)
Static Drain-to-Source On-Resistance
LS
Internal Source Inductance
7.5
ns
IDSS
Drain-to-Source Leakage Current
µA
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.3
V
TJ = 25°C, IS = 11A, VGS = 0V „
trr
Reverse Recovery Time
–––
60
90
ns
TJ = 25°C, IF = 11A
Qrr
Reverse Recovery Charge
––– 130 200
nC
di/dt = 100A/µs „…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
18
72
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
… Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ I
SD ≤ 11A, di/dt ≤ 290A/µs, V
DD ≤ V(BR)DSS,
TJ ≤ 175°C
‚ VDD = 25V, starting TJ = 25°C, L = 790µH
RG = 25Ω, IAS = 11A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )


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