전자부품 데이터시트 검색엔진 |
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2SC4161 데이터시트(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC4161 데이터시트(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SC4161 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 400 V VCBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V VEBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.8A ; VCE=5V 15 50 hFE-2 DC current gain IC=4A ; VCE=5V 10 hFE-3 DC current gain IC=10mA ; VCE=5V 10 COB Output capacitance IE=0; VCB=10V;f=1MHz 80 pF fT Transition frequency IC=0.8A ; VCE=10V 20 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 2.5 μs tf Fall time IC=5A; IB1=1A IB2=-2A VCC=200V ,RL=40Ω 0.3 μs hFE-1 Classifications L M N 15-30 20-40 30-50 |
유사한 부품 번호 - 2SC4161_15 |
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유사한 설명 - 2SC4161_15 |
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