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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BF1208D 데이터시트(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1208D 데이터시트(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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3 / 22 page  BF1208D_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 16 May 2007 3 of 22 NXP Semiconductors BF1208D Dual N-channel dual gate MOSFET 3. Ordering information 4. Marking 5. Limiting values [1] Tsp is the temperature at the soldering point of the source lead. Table 3. Ordering information Type number Package Name Description Version BF1208D - plastic surface-mounted package; 6 leads SOT666 Table 4. Marking codes Type number Marking code BF1208D 4A Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET VDS drain-source voltage DC - 6 V ID drain current DC - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current - ±10 mA Ptot total power dissipation Tsp ≤ 109 °C [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Fig 1. Power derating curve Tsp (˚C) 0 200 150 50 100 001aac193 100 150 50 200 250 Ptot (mW) 0 |
유사한 부품 번호 - BF1208D_15 |
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유사한 설명 - BF1208D_15 |
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