BF1214_15 datasheet(3/18 Pages) JMNIC

부품명	BF1214

상세설명	Dual N-channel dual gate MOSFET

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3 / 18 page

BF1214_1

Product data sheet

Rev. 01 — 30 October 2007

3 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

4.

Marking

5.

Limiting values

[1]

Tsp is the temperature at the soldering point of the source lead.

Table 4.

Marking

Type number

Marking

Description

BF1214

SB*

* = p : made in Hong Kong

* = t : made in Malaysia

* = w : made in China

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per MOSFET

VDS

drain-source voltage

DC

-

6

V

ID

drain current

DC

-

30

mA

IG1

gate1 current

-

±10

mA

IG2

gate2 current

-

±10

mA

Ptot

total power dissipation

Tsp ≤ 107 °C

[1] -

180

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Fig 1.

Power derating curve

Tsp (˚C)

0

200

150

50

100

001aac193

100

150

50

200

250

Ptot

(mW)

0

유사한 부품 번호 - BF1214_15

제조업체	부품명	데이터시트	상세설명
Quanzhou Jinmei Electro...	BF1214_2015	218Kb / 18P	Dual N-channel dual gate MOSFET

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Quanzhou Jinmei Electro...	BF1208D	262Kb / 22P	Dual N-channel dual gate MOSFET
NXP Semiconductors	BF1208	167Kb / 22P	Dual N-channel dual gate MOSFET Rev. 01-16 March 2005
Quanzhou Jinmei Electro...	BF1208_2015	175Kb / 22P	Dual N-channel dual gate MOSFET
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BF1214 데이터시트(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

BF1214 데이터시트(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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