전자부품 데이터시트 검색엔진 |
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ISL6115ACBZ-T 데이터시트(PDF) 4 Page - Intersil Corporation |
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ISL6115ACBZ-T 데이터시트(HTML) 4 Page - Intersil Corporation |
4 / 10 page 4 FN6855.1 April 23, 2010 Absolute Maximum Ratings TA = +25°C Thermal Information VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +16V GATE . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 8V ISEN, PGOOD, PWRON, CTIM, ISET . . . -0.3V to VDD + 0.3V Operating Conditions VDD Supply Voltage Range . . . . . . . . . . . . . . . +12V ±15% Temperature Range (TA) . . . . . . . . . . . . . . -40°C to +85°C ESD Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . 2.5kV Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Thermal Resistance (Typical, Note 4) θJA (°C/W) 8 Ld SOIC Package . . . . . . . . . . . . . . . . . . . 98 Maximum Junction Temperature (Plastic Package) . . +150°C Maximum Storage Temperature Range . . . -65°C to +150°C Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 4. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 5. All voltages are relative to GND, unless otherwise specified. Electrical Specifications VDD = 12V, TA = TJ = full temperature range, Unless Otherwise Specified. PARAMETER SYMBOL TEST CONDITIONS MIN (Note 6) TYP MAX (Note 6) UNITS CURRENT CONTROL ISET Current Source IISET_ft 17 20 22 µA ISET Current Source IISET_pt TJ = +15°C to +55°C 19 20 21 µA Current Limit Amp Offset Voltage Vio_ft VISET - VISEN -4.5 0 4.5 mV Current Limit Amp Offset Voltage Vio_pt VISET - VISEN, TJ = +15°C to +55°C -2 0 2 mV GATE DRIVE GATE Response Time to Severe OC pd_woc_amp VGATE to 10.8V - 100 - ns GATE Response Time to Overcurrent pd_oc_amp VGATE to 10.8V - 600 - ns GATE Turn-On Current IGATE VGATE to = 6V 10.8 14 16.7 µA GATE Pull-Down Current OC_GATE_I_4V Overcurrent 45 82 124 mA GATE Pull-Down Current (Note 6) WOC_GATE_I_4V Severe Overcurrent - 0.8 - A Undervoltage Threshold 12VUV_VTH 8.9 9.6 10.2 V GATE High Voltage 12VG GATE Voltage VDD + 5.7V VDD + 6.5V - V BIAS VDD Supply Current IVDD - 3 3.9 mA VDD POR Rising Threshold VDD_POR_L2H VDD Low to High 7 8.4 9 V VDD POR Falling Threshold VDD_POR_H2L VDD High to Low 6.9 8.1 8.7 V VDD POR Threshold Hysteresis VDD_POR_HYS VDD_POR_L2H - VDD_POR_H2L 0.1 0.3 0.5 V Maximum PWRON Pull-Up Voltage PWRN_PUV Maximum External Pull-up Voltage - 5 - V PWRON Pull-Up Voltage PWRN_V PWRON Pin Open 2.5 3.2 - V PWRON Rising Threshold PWR_Vth 1.1 1.7 2.35 V PWRON Hysteresis PWR_hys 125 170 250 mV PWRON Pull-Up Current PWRN_I 12.6 17 24 µA ISL6115A |
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