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BF422L-T92-K 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 BF422L-T92-K
상세설명  HIGH VOLTAGE TRANSISTOR
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BF422L-T92-K 데이터시트(HTML) 2 Page - Unisonic Technologies

  BF422L-T92-K Datasheet HTML 1Page - Unisonic Technologies BF422L-T92-K Datasheet HTML 2Page - Unisonic Technologies BF422L-T92-K Datasheet HTML 3Page - Unisonic Technologies BF422L-T92-K Datasheet HTML 4Page - Unisonic Technologies  
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BF422
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-063.C
ABSOLUTE MAXIMUM RATING (T
A=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
250
V
Collector-Emitter Voltage
VCEO
250
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
50
mA
collector current (Peak)
ICP
100
mA
base current
IB
50
mA
Collector Power dissipation
PC
625
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range
and assured by design from –20°C ~85°C.
ELECTRICAL CHARACTERISTICS (T
A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector Cut-Off Current
ICBO
VCB= 200V, IE=0
10
nA
Emitter Cut-Off Current
IEBO
VEB= 5V, IC=0
50
nA
DC current gain
hFE
VCE=20V, IC=25mA
50
Collector-Emitter Saturation Voltage
VCE(SAT)
IC= 30mA, IB= 5mA
0.6
V
Base-Emitter Voltage
VBE
VCE=-20V, IC=25mA
0.75
V
Transition frequency
fT
VCE= 10V , IC= 10mA
60
MHz
Reverse Transfer Capacitance
Cre
VCB= 30V, IE=0, f=1MHz
1.6
pF


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