BD238L-T60-K datasheet(2/3 Pages) UTC

부품명	BD238L-T60-K

상세설명	-80V, PNP TRANSISTOR

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제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

BD238

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R226-002.C



ABSOLUTE MAXIMUM RATINGS (T

A=25

°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-100

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-2

A

Collector Power Dissipation

PC

1.25

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A=25

°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

V(BR)CBO

IC=-1mA, IE=0

-100

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-100mA, IB=0

-80

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IC=-1mA, IE=0

-5

V

Collector Cut-Off Current

ICBO

VCB=-100V, IE=0

-100

µA

Emitter Cut-Off Current

IEBO

VEB=-5V, IC=0

-1

mA

hFE(1)

VCE=-2V, IC=-150mA

40

DC Current Gain

hFE(2)

VCE=-2V, IC=-1A

25

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-1A, IB=-100mA

-0.6

V

Transition Frequency

fT

VCE=-10V, IC=-250mA,

f=10MHz

3

MHz

유사한 부품 번호 - BD238L-T60-K

제조업체	부품명	데이터시트	상세설명
Unisonic Technologies	BD238L-T6S-K	109Kb / 3P	-80V, PNP TRANSISTOR

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유사한 설명 - BD238L-T60-K

제조업체	부품명	데이터시트	상세설명
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BD238L-T60-K 데이터시트(PDF) 2 Page - Unisonic Technologies

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유사한 부품 번호 - BD238L-T60-K

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