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UA6K 데이터시트(PDF) 2 Page - Unisonic Technologies |
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UA6K 데이터시트(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UA6K DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R218-007.A ABSOLUTE MAXIMUM RATINGS (TA=25°С) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Collector Power dissipation PC 200 mW Junction Temperature TJ 150 °С Storage Temperature TSTG -55~+150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO IC =-50μA -50 V Collector-emitter breakdown voltage BVCEO IC =-1mA -50 V Emitter-base breakdown voltage BVEBO IE =-50μA -5 V Collector cutoff current ICBO VCB=-50V -0.5 μA Emitter cutoff current IEBO VEB=-4V -0.5 μA Collector-emitter saturation voltage VCE(SAT) IC =-5mA, IB = -0.5mA -0.3 V DC current transfer ratio hFE VCE=-5V, IC = -1mA 100 250 600 Transition frequency fT VCE=-10V, IE=5mA, f=100MHz (Note) 250 MHz Input resistance R1 32.9 47 61.1 kΩ Note: Transition frequency of the device |
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