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LM3151 데이터시트(PDF) 3 Page - Texas Instruments

부품명 LM3151
상세설명  LM3151/LM3152/LM3153 SIMPLE SWITCHER짰 CONTROLLER, High Input Voltage Synchronous Step-Down
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LM3151 데이터시트(HTML) 3 Page - Texas Instruments

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LM3151, LM3152, LM3153
www.ti.com
SNVS562G – SEPTEMBER 2008 – REVISED MARCH 2011
PIN DESCRIPTIONS
Pin
Name
Description
Function
Supply Voltage for
Nominally regulated to 5.95V. Connect a 1 µF to 2.2 µF decoupling capacitor from this pin to
1
VCC
FET Drivers
ground.
Supply pin to the device. Nominal input range is 6V to 42V. See ordering information for Vin
2
VIN
Input Supply Voltage
limitations.
To enable the IC apply a logic high signal to this pin greater than 1.26V typical or leave
3
EN
Enable
floating. To disable the part, ground the EN pin.
Internally connected to the resistor divider network which sets the fixed output voltage. This
4
FB
Feedback
pin also senses the output voltage faults such a over-voltage and short circuit conditions.
Ground for all internal bias and reference circuitry. Should be connected to PGND at a single
5,9
SGND
Signal Ground
point.
An internal 7.7 µA current source charges an external capacitor to provide the soft-start
6
SS
Soft-Start
function.
Internally not electrically connected. These pins may be left unconnected or connected to
7,8
N/C
Not Connected
ground.
Switch pin of controller and high-gate driver lower supply rail. A boost capacitor is also
10
SW
Switch Node
connected between this pin and BST pin
Gate drive signal to the high-side NMOS switch. The high-side gate driver voltage is supplied
11
HG
High-Side Gate Drive
by the differential voltage between the BST pin and SW pin.
High-gate driver upper supply rail. Connect a 0.33 µF-0.47 µF capacitor from SW pin to this
Connection for
12
BST
pin. An internal diode charges the capacitor during the high-side switch off-time. Do not
Bootstrap Capacitor
connect to an external supply rail.
Gate drive signal to the low-side NMOS switch. The low-side gate driver voltage is supplied by
13
LG
Low-Side Gate Drive
VCC.
Synchronous rectifier MOSFET source connection. Tie to power ground plane. Should be tied
14
PGND
Power Ground
to SGND at a single point.
Exposed die attach pad should be connected directly to SGND. Also used to help dissipate
EP
EP
Exposed Pad
heat out of the IC.
Copyright © 2008–2011, Texas Instruments Incorporated
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