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6N70ZG-TM3-T 데이터시트(PDF) 2 Page - Unisonic Technologies |
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6N70ZG-TM3-T 데이터시트(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 6N70Z Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw Ver. a ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage (Note 2) VGSS ±20 V Drain Current Continuous TC=25°C ID 6 A TC=100°C 3.8 A Pulsed IDM 24 A Avalanche Current (Note 2) IAR 6 A Avalanche Energy Single Pulsed (Note 3) EAS 300 mJ Repetitive (Note 2) EAR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.5 V/ns Power Dissipation SOT-82 PD 75 W TO-251 55 W Linear Derarting Factor SOT-82 0.60 W/°C TO-251 0.44 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient SOT-82 θJA 62.5 °С/W TO-251 110 °С/W Junction to Case SOT-82 θJc 1.67 °С/W TO-251 2.27 °С/W |
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