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BTA16A 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 BTA16A
상세설명  16A TRIACS
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BTA16A 데이터시트(HTML) 2 Page - Unisonic Technologies

  BTA16A_15 Datasheet HTML 1Page - Unisonic Technologies BTA16A_15 Datasheet HTML 2Page - Unisonic Technologies BTA16A_15 Datasheet HTML 3Page - Unisonic Technologies BTA16A_15 Datasheet HTML 4Page - Unisonic Technologies  
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BTA16A
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R401-054.B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
RMS On-State Current (Full Sine Wave) TC=86°C
IT(RMS)
16
A
Non Repetitive Surge Peak
On-State Current (Full
Cycle, TJ initial=25°C)
F=50 Hz
t=20ms
ITSM
160
A
F=60 Hz
t=16.7ms
168
A
I
2t Value for Fusing
tP=10ms
I
2t
144
A
2s
Critical Rate of Rise of
On-State Current IG=2xIGT,
tr≤100ns
F=120 Hz TJ=125°C
dI/dt
50
A/µs
Non Repetitive Surge Peak
Off-State Voltage
tP=10ms
TJ=25°C
VDSM/VRSM
VDRM/VRRM+100
V
Peak Gate Current
tP=20µs
TJ=125°C
IGM
4
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case (AC)
θJC
2.1
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified.)
FOR SNUBBERLESS TYPE and LOGIC LEVEL TYPE (3 QUADRANTS)
PARAMETER
SYMBOL
TEST CONDITIONS
SW
CW
BW
UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gate Trigger Current
(Note 1)
IGT
VD=12V, RL=33Ω
I-II-III
10
35
50
mA
Gate Trigger Voltage
VGT
I-II-III
1.3
1.3
1.3
V
Gate Non-Trigger
Voltage
VGD
VD=VDRM,
RL=3.3kΩ,
TJ=125°C
I-II-III
0.2
0.2
0.2
V
Holding Current
(Note 2)
IH
IT=500mA
15
35
50
mA
Latching Current
IL
IG=1.2IGT
I-III
25
50
70
mA
II
30
60
80
mA
Critical Rate of Rise
of Off-State Voltage
(Note 2)
dV/dt
VD=67%VDRM, Gate
Open, TJ=125°C
40
500
1000
V/µs
Critical Rate of Rise
of Off-State Voltage
at Commutation
(Note 2)
(dI/dt)c
(dV/dt)c=0.1V/µs,
TJ=125°C
8.5
A/ms
(dV/dt)c=10V/µs,
TJ=125°C
3.0
A/ms
Without Snubber
TJ=125°C
8.5
14
A/ms
Note: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.


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