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BTB24AG-6-CW-TA3-T 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 BTB24AG-6-CW-TA3-T
상세설명  25A TRIACS
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제조업체  UTC [Unisonic Technologies]
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BTB24A
Preliminary
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R401-060.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
RMS On-State Current (Full Sine Wave) TC=75°C
IT(RMS)
25
A
Non Repetitive Surge Peak
On-State Current (Full
Cycle, TJ initial=25°C)
F=50 Hz
t=20ms
ITSM
250
A
F=60 Hz
t=16.7ms
260
A
I
2t Value for Fusing
tP=10ms
I
2t
340
A
2s
Critical Rate of Rise of
On-State Current IG=2xIGT,
tr≤100ns
F=120 Hz TJ=125°C
dI/dt
50
A/µs
Non Repetitive Surge Peak
Off-State Voltage
tP=10ms
TJ=25°C
VDSM/VRSM
VDRM/VRRM+100
V
Peak Gate Current
tP=20µs
TJ=125°C
IGM
4
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case (AC)
θJC
0.8
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
CW
BW
UNIT
MIN TYP MAX MIN TYP MAX
SNUBBERLESS TYPE (3 QUADRANTS)
Gate Trigger Current (Note 1)
IGT
VD=12V,
RL=33Ω
I-II-III
35
50
mA
Gate Trigger Voltage
VGT
I-II-III
1.3
1.3
V
Gate Non-Trigger Voltage
VGD
VD=VDRM,
RL=3.3kΩ,
TJ=125°C
I-II-III
0.2
0.2
V
Holding Current (Note 2)
IH
IT=500mA
50
75
mA
Latching Current
IL
IG=1.2IGT
I-III
70
80
mA
II
80
100
mA
Critical Rate of Rise of Off-State
Voltage (Note 2)
dV/dt
VD=67%VDRM, Gate
Open, TJ=125°C
500
1000
V/µs
Critical Rate of Rise of Off-State
Voltage at Commutation
(Note 2)
(dI/dt)c
Without Snubber,
TJ=125°C
13
22
A/ms
STATIC CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Peak On-State Voltage (Note 2)
VTM
ITM=35A, tP=380μs
TJ=25°C
1.55
V
Threshold Voltage (Note 2)
VTO
TJ=125°C
0.85
V
Dynamic Resistance (Note 2)
RD
TJ=125°C
16
mΩ
Repetitive Peak Off-State
Current
IDRM
VDRM=VRRM
TJ=25°C
5
μA
IRRM
TJ=125°C
3
mA
Notes: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.


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