SI1922ED datasheet(2/12 Pages) TFUNK

부품명	SI1922ED

상세설명	Dual N-Channel 20 V (D-S) MOSFET

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Document Number: 67192

S11-2307-Rev. B, 21-Nov-11

Vishay Siliconix

Si1922EDH

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

20

V

VDS Temperature Coefficient

ΔVDS/TJ

ID = 250 µA

20

mV/°C

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

- 2.3

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.4

1

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 25

µA

VDS = 0 V, VGS = ± 4.5 V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

µA

VDS = 20 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS ≤ 5 V, VGS = 4.5 V

4

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 1 A

0.165

0.198

Ω

VGS = 2.5 V, ID = 1 A

0.187

0.225

VGS = 1.8 V, ID = 0.2 A

0.210

0.263

Forward Transconductancea

gfs

VDS = 4 V, ID = 1.5 A

4

S

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 8 V, ID = 1.5 A

1.6

2.5

nC

VDS = 10 V, VGS = 4.5 V, ID = 1.5 A

0.9

1.8

Gate-Source Charge

Qgs

0.1

Gate-Drain Charge

Qgd

0.2

Gate Resistance

Rg

f = 1 MHz

0.4

1.9

3.8

k

Ω

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 8.3 Ω

ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω

43

65

ns

Rise Time

tr

80

120

Turn-Off Delay Time

td(off)

480

720

Fall Time

tf

220

330

Turn-on Delay Time

td(on)

VDD = 10 V, RL = 8.3 Ω

ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω

22

33

Rise Time

tr

46

70

Turn-Off Delay Time

td(off)

645

968

Fall Time

tr

215

323

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

1

A

Pulse Diode Forward Current

ISM

4

Body Diode Voltage

VSD

IS = 1.2 A, VGS = 0 V

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C

918

ns

Body Diode Reverse Recovery Charge

Qrr

24

nC

Reverse Recovery Fall Time

ta

5

ns

Reverse Recovery Rise Time

tb

4

유사한 부품 번호 - SI1922ED

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI1922EDH	261Kb / 12P	Dual N-Channel 20 V (D-S) MOSFET Rev. A, 29-Nov-10
	SI1922EDH	265Kb / 12P	Dual N-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI1922EDH	265Kb / 12P	Dual N-Channel 20 V (D-S) MOSFET 01-Jan-2022

More results

유사한 설명 - SI1922ED

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI1912EDH	42Kb / 5P	Dual N-Channel 20-V (D-S) MOSFET Rev. A, 05-Mar-01
	SI1902DL	43Kb / 4P	Dual N-Channel 20-V (D-S) MOSFET Rev. E, 12-Aug-02
	SI5908DC	236Kb / 10P	Dual N-Channel 20 V (D-S) MOSFET Rev. B, 08-Mar-10
	SI9926CDY	255Kb / 10P	Dual N-Channel 20-V (D-S) MOSFET Rev. B, 27-Apr-09
DinTek Semiconductor Co...	DTM9936	307Kb / 9P	Dual N-Channel 20-V (D-S) MOSFET
DinTek Semiconductor Co...	DTS2212	306Kb / 9P	Dual N-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI1902CDL	236Kb / 11P	Dual N-Channel 20 V (D-S) MOSFET Rev. A, 02-May-11
	SI7904BDN	559Kb / 13P	Dual N-Channel 20-V (D-S) MOSFET Rev. B, 29-Dec-08
	SI1024X	113Kb / 5P	Dual N-Channel 20-V (D-S) MOSFET Rev. C, 24-Mar-08
Guangdong Kexin Industr...	KI5908DC	66Kb / 2P	Dual N-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SI7904DN	88Kb / 5P	Dual N-Channel 20-V (D-S) MOSFET Rev. G, 07-Jul-08

More results

SI1922ED 데이터시트(PDF) 2 Page - Vishay Telefunken

SI1922ED 데이터시트(HTML) 2 Page - Vishay Telefunken

유사한 부품 번호 - SI1922ED

유사한 설명 - SI1922ED

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