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SI7540DP 데이터시트(PDF) 7 Page - Vishay Telefunken |
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SI7540DP 데이터시트(HTML) 7 Page - Vishay Telefunken |
7 / 15 page Document Number: 71911 S09-0227-Rev. F, 09-Feb-09 www.vishay.com 7 Vishay Siliconix Si7540DP P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 20 10 1 VSD - Source-to-Drain Voltage (V) - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.03 0.06 0.09 0.12 0.15 0 1234 5 ID = 8.9 A VGS - Gate-to-Source Voltage (V) ID = 3 A 0 24 40 8 16 Time (s) 32 100 600 0.1 0.01 1 10 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 TA = 25 °C Single Pulse 10 s DC 0.1 IDM Limited ID(on) Limited BVDSS Limited 1 s 100 ms 10 ms 1 ms Limited by RDS(on) |
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