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SIA537EDJ 데이터시트(PDF) 9 Page - Vishay Telefunken

부품명 SIA537EDJ
부품 상세설명  N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
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SIA537EDJ 데이터시트(HTML) 9 Page - Vishay Telefunken

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SiA537EDJ
www.vishay.com
Vishay Siliconix
S13-2635-Rev. A, 30-Dec-13
9
Document Number: 62934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
2
4
6
8
0369
12
15
18
ID =4.9 A
VDS =10V
VDS =5V
VDS =16V
Q
g - Total Gate Charge (nC)
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 25 °C
TJ = 150 °C
V
SD - Source-to-Drain Voltage (V)
0.25
0.35
0.45
0.55
0.65
0.75
- 50
- 25
0
25
50
75
100
125
150
ID = 250 μA
T
J - Temperature (°C)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50
- 25
0
25
50
75
100
125
150
VGS =1.8 V; ID =1A
VGS =1.5 V; ID =0.5 A
VGS =2.5 V; 4.5V; I D =3.8 A
T
J - Junction Temperature (°C)
0.00
0.03
0.06
0.09
0.12
0.15
0.18
0
1234
5
ID = 1 A; TJ = 25 °C
ID = 3.8 A; TJ = 125 °C
ID = 1 A; TJ = 125 °C
ID = 3.8 A; TJ = 25 °C
V
GS - Gate-to-Source Voltage (V)
1000
100
1
0.001
0.01
0.1
10
Pulse (s)
20
10
5
15
0


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