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SIA537EDJ 데이터시트(PDF) 10 Page - Vishay Telefunken

부품명 SIA537EDJ
부품 상세설명  N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
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제조업체  TFUNK [Vishay Telefunken]
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SIA537EDJ 데이터시트(HTML) 10 Page - Vishay Telefunken

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SiA537EDJ
www.vishay.com
Vishay Siliconix
S13-2635-Rev. A, 30-Dec-13
10
Document Number: 62934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Safe Operating Area, Junction-to-Ambient
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
100
1
0.1
1
10
100
0.01
10
0.1
TA = 25 °C
Single Pulse
1 s,10 s
Limited by RDS(on)*
BVDSS Limited
1ms
100 μs
10 ms
DC
100 ms
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
Limited by I
DM
0
2
4
6
8
10
12
0
25
50
75
100
125
150
Package Limited
T
C - Case Temperature (°C)
0
2
4
6
8
25
50
75
100
125
150
TC - Case Temperature (°C)


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