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SIA537EDJ 데이터시트(PDF) 2 Page - Vishay Telefunken

부품명 SIA537EDJ
부품 상세설명  N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
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제조업체  TFUNK [Vishay Telefunken]
홈페이지  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

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SiA537EDJ
www.vishay.com
Vishay Siliconix
S13-2635-Rev. A, 30-Dec-13
2
Document Number: 62934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum Junction-to-Ambient b,f
t
 5 s
RthJA
52
65
52
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
12.5
16
12.5
16
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
N-Ch
12
-
-
V
VGS = 0 V, ID = -250 μA
P-Ch
-20
-
-
VDS Temperature Coefficient
V
DS/TJ
ID = 250 μA
N-Ch
-
8
-
mV/°C
ID = -250 μA
P-Ch
-
-15
-
VGS(th) Temperature Coefficient
V
GS(th)/TJ
ID = 250 μA
N-Ch
-
-2.5
-
ID = -250 μA
P-Ch
-
2.5
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
N-Ch
0.4
-
1
V
VDS = VGS, ID = -250 μA
P-Ch
-0.4
-
-1
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
N-Ch
-
-
± 0.5
μA
P-Ch
-
-
± 3
VDS = 0 V, VGS = ± 8 V
N-Ch
-
-
± 5
P-Ch
-
-
± 30
Zero Gate Voltage Drain Current
IDSS
VDS = 12 V, VGS = 0 V
N-Ch
-
-
1
VDS = -20 V, VGS = 0 V
P-Ch
-
-
-1
VDS = 12 V, VGS = 0 V, TJ = 55 °C
N-Ch
-
-
10
VDS = -20 V, VGS = 0 V, TJ = 55 °C
P-Ch
-
-
-10
On-State Drain Current b
ID(on)
VDS  5 V, VGS = 4.5 V
N-Ch
10
-
-
A
VDS  -5 V, VGS = -4.5 V
P-Ch
-10
-
-
Drain-Source On-State Resistance b
RDS(on)
VGS = 4.5 V, ID = 5.2 A
N-Ch
-
0.023
0.028
VGS = -4.5 V, ID = -3.8 A
P-Ch
-
0.044
0.054
VGS = 2.5 V, ID = 4.8 A
N-Ch
-
0.027
0.033
VGS = -2.5 V, ID = -3.3 A
P-Ch
-
0.057
0.070
VGS = 1.8 V, ID = 2.5 A
N-Ch
-
0.035
0.042
VGS = -1.8 V, ID = -1 A
P-Ch
-
0.075
0.104
VGS = -1.5 V, ID = -0.5 A
P-Ch
-
0.097
0.165
Forward Transconductance b
gfs
VDS = 6 V, ID = 5.2 A
N-Ch
-
23
-
S
VDS = -6 V, ID = -3.6 A
P-Ch
-
11
-


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